elektronische bauelemente 2SB1260 -1 a, -80 v pnp plastic encapsulated transistor 01-july-2007 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. 1 base 3 emitte r collector 24 rohs compliant product a suffix of ?-c? specifies halogen & lead-free features high breakdown voltage and high current bv ceo =-80v, i c =-1a good h fe linearity complements to 2sd1898 package information weight: 0.05 g (approximately) marking zl absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -80 v emitter-base voltage v ebo -5 v collector current -continuous i c -1 a collector power dissipation p c 0.5 w junction & storage temperature t j , t stg 150, -55~150 c pnp electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo -80 - - v i c =-50 a, i e =0 collector-emitter breakdown voltage v (br)ceo -80 - - v i c = -1ma, i b =0 emitter-base breakdown voltage v (br)ebo -5 - - v i e =-50 a, i c =0 collector cut-off current i cbo - - -1 a v cb =-60v, i e =0 emitter cut-off current i ebo - - -1 a v eb =-4 v, i c =0 dc current gain h fe 82 - 390 v ce =-3v, i c = -100ma collector-emitter saturation voltage v ce(sat) - - -0.4 v i c =-500ma, i b = -50ma transition frequency f t - 100 - mhz v ce =-5v, i c =-50ma, f=30mhz output capacitance c ob - 25 - pf v cb =-10v, i e =0, f=1mhz classification of hfe2 rank q r s range 82 - 180 120 - 270 180 - 390 millimete r millimete r ref. min. max. ref. min. max. a 4.40 4.60 g 0.40 0.58 b 3.94 4.25 h 1.50 typ c 1.40 1.60 j 3.00 typ d 2.30 2.60 k 0.32 0.52 e 1.50 1.70 l 0.35 0.44 f 0.89 1.20 sot-89 a e c d b k h f g l j 1 2 3 4 b c e
elektronische bauelemente 2SB1260 -1 a, -80 v pnp plastic encapsulated transistor 01-july-2007 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves fig.1 grounded emitter propagation characteristics 0 -0.1 -1 -100 -1000 base to emitter voltage : v be (v) collector current : i c (ma) -0.8 -1.2 -1.6 -10 -0.2 -0.4 -1.0 -1.4 -0.6 ta=25 c v ce =- 5v fig.2 grounded emitter output characteristics 0 0 -0.2 -0.8 -1.0 -0.4 -0.8 -1.2 -1.6 -0.4 -0.6 -2.0 -0.2 -0.6 -1.0 -1.4 -1.8 collector current : i c (ma) collector to emitter voltage : v ce (v) ta=25 c -0.05ma i b =0ma -0.1ma -0.15ma -0.2ma -0.25ma -0.3ma -0.35ma -0.4ma -0.45ma fig.3 dc current gain vs. collector current -1 -2 -5 -10 -20 -50-100 -200 -500 -2000 collector current : i c (ma) 10 dc current gain : h fe -1000 20 50 100 200 500 1000 v ce =-3v -1v ta=25 c fig.4 collector-emitter saturation voltage vs. collector current -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 ta=25 c i c /i b =20 -1 -2 -5 -10 -20 -50 -100-200-500 -2000 -1000 collector saturation voltage : v ce(sat) (v) collector current : i c (ma) 10 fig.5 gain bandwidth product vs. emitter current 1 2 5 10 20 50 100 200 500 1000 1 2 5 10 20 50 100 200 500 1000 emitter current : i e (ma) transition frequency : f t (mhz) ta=25 c v ce =- 5v fig.6 collector output capacitance vs. collector-base voltage -0.2 -0.1 -0.5 -1 -2 -5 -10 -20 -50 -100 1 2 5 10 20 50 100 200 500 1000 ta=25 c f=1mhz i e =0a collector output capacitance : cob ( pf) collector to base voltage : v cb (v) fig. 7 emitter input capacitance vs. emitter-base voltage -0.1 10 20 -0.2 -0.5 -1 -2 200 1000 -5 -10 500 100 50 ta=25 c f=1mhz i c =0a emitter input capacitance : cib (pf) emitter to base voltage : v eb (v) -0.5 -2 -1 -5 -10 -20 -50 -100 fig. 8 safe operating area (2SB1260) collector current : i c (a) collector to emitter voltage : v ce (v) -2 -1 -0.5 -0.2 -0.1 -0.05 ta=25 c * single nonrepetitive pulse i c max . (pulse) i c max . p w = 10ms p w =100ms dc
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